Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

RS Stock No.:: 268-8306
Mfr. Part No.:: SIHK085N60EF-T1GE3
Manufacturer:: Vishay

Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3

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Subtotal (1 reel of 2000 units)*

PHP724,098.00

(exc. VAT)

PHP810,990.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 2,000 unit(s), ready to ship from another location

Units	Per Unit	Per Reel*
2000 +	PHP362.049	PHP724,098.00

*price indicative

RS Stock No.:: 268-8306
Mfr. Part No.:: SIHK085N60EF-T1GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.085Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.085Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK085N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHK085N60EF-T1GE3

This MOSFET is a high-voltage switching transistor designed for power conversion and switching applications where elevated voltage and thermal endurance are required. It is a PCB-mounted, N-channel enhancement device optimised for medium-current, high-voltage circuits in demanding thermal environments. The component conforms to RoHS directives and is intended for engineers specifying rugged discrete power transistors for industrial and power-electronics designs.

Features and Benefits:

• 650V maximum drain voltage delivers wide high-voltage headroom
• 30A continuous drain current supports substantial load currents
• 0.085 Ω Rds(on) reduces conduction losses in power paths
• 184W maximum power dissipation enables sustained high-power operation
• 63 nC typical gate charge allows predictable switching-drive requirements
• Gate-source limit ±30V protects gate-drive margin during transients

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Used for phase-leg switches in motor drive inverter stages
• Ideal for primary-side switchers in SMPS topologies
• Can be used for load switching in battery management systems
• Used with discrete power stages requiring compact package density

What temperature extremes can the device tolerate during operation?

It is specified to operate across a broad range from -55 °C up to 150 °C, covering low-temperature starts and elevated junction conditions.

Which package type should I expect for PCB assembly and thermal management?

It is supplied in a PowerPAK 10x12 package optimised for PCB mounting to aid heat spreading and low-inductance layouts.

What gate-drive considerations are implied by the gate charge value?

The typical 63 nC gate charge requires a driver capable of sourcing and sinking sufficient current to meet desired switching speeds while managing switching losses.

How does the channel configuration affect circuit design choices?

Being an N-channel enhancement device, it necessitates appropriate gate-drive polarity and is typically used on the low side or as a high-side switch with level shifting.