Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23 TN2130K1-G

RS Stock No.:: 264-8917
Mfr. Part No.:: TN2130K1-G
Manufacturer:: Microchip

Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23 TN2130K1-G

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Subtotal (1 pack of 25 units)*

PHP684.95

(exc. VAT)

PHP767.15

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

1,975 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
25 - 25	PHP27.398	PHP684.95
50 - 75	PHP26.853	PHP671.33
100 - 225	PHP26.308	PHP657.70
250 - 975	PHP25.797	PHP644.93
1000 +	PHP25.286	PHP632.15

*price indicative

RS Stock No.:: 264-8917
Mfr. Part No.:: TN2130K1-G
Manufacturer:: Microchip

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	250mA
	Maximum Drain Source Voltage Vds	300V
	Package Type	SOT-23
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	MOSFET
	Maximum Power Dissipation Pd	0.36W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 250mA
	Maximum Drain Source Voltage Vds 300V
	Package Type SOT-23
	Mount Type Through Hole
	Pin Count 3
	Channel Mode MOSFET
	Maximum Power Dissipation Pd 0.36W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - TN2130K1-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23 TN2130K1-G

FREE delivery for orders over ₱3,000.00

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