Infineon HEXFET Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220 IRFI530NPBF

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Subtotal (1 pack of 10 units)*

PHP491.04

(exc. VAT)

PHP549.96

(inc. VAT)

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  • 190 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 40PHP49.104PHP491.04
50 - 90PHP43.649PHP436.49
100 - 240PHP39.313PHP393.13
250 - 990PHP38.544PHP385.44
1000 +PHP35.745PHP357.45

*price indicative

Packaging Options:
RS Stock No.:
262-6759
Mfr. Part No.:
IRFI530NPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

High voltage isolation 2.5KVRMS

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