Infineon IPP Type N-Channel MOSFET, 8 A, 600 V, 3-Pin TO-220
- RS Stock No.:
- 260-1217
- Mfr. Part No.:
- IPP60R065S7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 500 units)*
PHP86,117.50
(exc. VAT)
PHP96,451.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from January 18, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 500 - 500 | PHP172.235 | PHP86,117.50 |
| 1000 - 1000 | PHP155.012 | PHP77,506.00 |
| 1500 + | PHP139.511 | PHP69,755.50 |
*price indicative
- RS Stock No.:
- 260-1217
- Mfr. Part No.:
- IPP60R065S7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.45 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Width 9.45 mm | ||
Standards/Approvals RoHS | ||
Height 4.57mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
Related links
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