Infineon IPP Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220

RS Stock No.:: 260-1215
Mfr. Part No.:: IPP60R040S7XKSA1
Manufacturer:: Infineon

Infineon IPP Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 500 units)*

PHP120,032.50

(exc. VAT)

PHP134,436.50

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from December 28, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tube*
500 - 500	PHP240.065	PHP120,032.50
1000 - 1000	PHP216.058	PHP108,029.00
1500 +	PHP194.453	PHP97,226.50

*price indicative

RS Stock No.:: 260-1215
Mfr. Part No.:: IPP60R040S7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Series	IPP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Forward Voltage Vf	0.82V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	83nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	150°C
	Width	15.95 mm
	Length	10.36mm
	Height	4.57mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Series IPP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Forward Voltage Vf 0.82V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 83nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 150°C
	Width 15.95 mm
	Length 10.36mm
	Height 4.57mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPP60R040S7XKSA1

Infineon Series IPP MOSFET Transistor, 600V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - IPP60R040S7XKSA1

This MOSFET transistor is a cutting-edge high-voltage semiconductor component designed for efficient power switching. With robust specifications including a continuous drain current of 13A and a maximum drain-source voltage of 600V, it is encapsulated in a TO-220 package, making it suitable for a variety of applications. Ensuring reliable performance in demanding environments, it operates within a wide temperature range from -55°C to +150°C.

Features & Benefits

• Designed with CoolMOS™ S7 technology to minimise conduction losses

• Offers a low on-state resistance of 40mΩ for enhanced efficiency

• Capable of handling high pulse currents for demanding requirements

• Optimised for low-frequency switching applications, improving system performance

• Built-in features ensure high reliability in static switching scenarios

Applications

• Utilised for solid-state relays and innovative circuit breaker designs

• Ideal for line rectification within high-power performances such as computing and telecommunications

• Applicable in renewable energy solutions, particularly solar inverters

What are the critical features impacting thermal performance?

The device boasts a maximum power dissipation of 245W and a thermal resistance from junction to ambient of 62°C/W, facilitating effective heat management. This ensures longevity and reliability in demanding operational conditions.

How does this component enhance system efficiency for low-frequency applications?

With its low on-state resistance and CoolMOS™ technology, energy losses during operation are significantly reduced, enabling improved overall efficiency and minimising heat generation in low-frequency environments.

What are the recommended practices for using this in high-voltage applications?

It is advisable to evaluate the impact of cosmic radiation during the design phase and consider appropriate design practices, such as using ferrite beads on the gate for parallel applications, to mitigate any potential issues.