Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG
- RS Stock No.:
- 259-2739
- Mfr. Part No.:
- IPTG063N15NM5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1800 units)*
PHP366,795.00
(exc. VAT)
PHP410,810.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1800 - 1800 | PHP203.775 | PHP366,795.00 |
| 3600 - 3600 | PHP193.586 | PHP348,454.80 |
| 5400 + | PHP183.907 | PHP331,032.60 |
*price indicative
- RS Stock No.:
- 259-2739
- Mfr. Part No.:
- IPTG063N15NM5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSOG | |
| Series | IPT | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.3mΩ | |
| Forward Voltage Vf | 0.84V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Height | 2.4mm | |
| Width | 8.75 mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSOG | ||
Series IPT | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.3mΩ | ||
Forward Voltage Vf 0.84V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Height 2.4mm | ||
Width 8.75 mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-22
Related links
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG IPTG063N15NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8 IPT063N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V, 16-Pin HDSOP
- Infineon IPT Type N-Channel MOSFET 150 V, 16-Pin HDSOP IPTC063N15NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1
- Infineon IPT Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-HSOG-8 IPTG017N12NM6ATMA1