Infineon HEXFET Type N-Channel MOSFET, 5 A, 200 V TO-252 IRFR220NTRPBF

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Subtotal (1 pack of 5 units)*

PHP270.09

(exc. VAT)

PHP302.50

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP54.018PHP270.09
10 - 95PHP52.398PHP261.99
100 - 245PHP49.252PHP246.26
250 - 495PHP44.818PHP224.09
500 +PHP39.438PHP197.19

*price indicative

Packaging Options:
RS Stock No.:
258-3982
Distrelec Article No.:
304-40-536
Mfr. Part No.:
IRFR220NTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

600mΩ

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

43W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Increased ruggedness

Wide availability from distribution partners

Industry standard qualification level

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