Infineon HEXFET Type N-Channel MOSFET, 17 A, 200 V TO-252 IRFR15N20DTRPBF
- RS Stock No.:
- 258-3980
- Mfr. Part No.:
- IRFR15N20DTRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP265.32
(exc. VAT)
PHP297.16
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,540 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP53.064 | PHP265.32 |
| 10 - 95 | PHP51.472 | PHP257.36 |
| 100 - 245 | PHP48.384 | PHP241.92 |
| 250 - 495 | PHP44.03 | PHP220.15 |
| 500 + | PHP38.746 | PHP193.73 |
*price indicative
- RS Stock No.:
- 258-3980
- Mfr. Part No.:
- IRFR15N20DTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Increased ruggedness
Multi-vendor compatibility
Industry standard qualification level
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-252 IRFR024NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-252 IRFR220NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252