Infineon IPD Type P-Channel MOSFET, -73 A, -40 V Enhancement, 3-Pin TO-252 IPD70P04P409ATMA2

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Subtotal (1 pack of 2 units)*

PHP171.03

(exc. VAT)

PHP191.554

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP85.515PHP171.03
10 - 98PHP82.945PHP165.89
100 - 248PHP77.97PHP155.94
250 - 498PHP70.95PHP141.90
500 +PHP62.44PHP124.88

*price indicative

Packaging Options:
RS Stock No.:
258-3862
Mfr. Part No.:
IPD70P04P409ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-73A

Maximum Drain Source Voltage Vds

-40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

75W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1, RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.

No charge pump required for high side drive

Simple interface drive circuit

Highest current capability


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