Infineon iPB Type N-Channel MOSFET, 136 A, 150 V N, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

PHP201,096.00

(exc. VAT)

PHP225,228.00

(inc. VAT)

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Per Unit
Per Reel*
1000 - 1000PHP201.096PHP201,096.00
2000 - 2000PHP180.986PHP180,986.00
3000 +PHP162.888PHP162,888.00

*price indicative

RS Stock No.:
258-3792
Mfr. Part No.:
IPB060N15N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

136A

Maximum Drain Source Voltage Vds

150V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

54.5nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklifts and e-scooters, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) and Qrr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge increases commutation ruggedness.

Lower output charge

Ultra-low reverse recovery charge

Reduced paralleling

Higher power density designs


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