Infineon iPB Type N-Channel MOSFET, 166 A, 80 V N, 3-Pin TO-263
- RS Stock No.:
- 258-3788
- Mfr. Part No.:
- IPB024N08N5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP114,859.00
(exc. VAT)
PHP128,642.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 1,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP114.859 | PHP114,859.00 |
| 2000 - 2000 | PHP111.413 | PHP111,413.00 |
| 3000 + | PHP106.956 | PHP106,956.00 |
*price indicative
- RS Stock No.:
- 258-3788
- Mfr. Part No.:
- IPB024N08N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 166A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 99nC | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 0.92V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 166A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 99nC | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 0.92V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 80V industrial power MOSFET offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Optimized for synchronous rectification
Ideal for high switching frequency
Less paralleling required
Increased power density
Related links
- Infineon iPB Type N-Channel MOSFET 80 V N, 3-Pin TO-263 IPB024N08N5ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1
