Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- RS Stock No.:
- 258-3786
- Mfr. Part No.:
- IPB020N10N5LFATMA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP387.98
(exc. VAT)
PHP434.54
(inc. VAT)
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In Stock
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP387.98 |
| 10 - 99 | PHP350.89 |
| 100 - 249 | PHP290.43 |
| 250 - 499 | PHP252.88 |
| 500 + | PHP237.77 |
*price indicative
- RS Stock No.:
- 258-3786
- Mfr. Part No.:
- IPB020N10N5LFATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 313W | |
| Forward Voltage Vf | 0.89V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 313W | ||
Forward Voltage Vf 0.89V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
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