Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V TO-220 IRF8010PBF
- RS Stock No.:
- 257-9326
- Mfr. Part No.:
- IRF8010PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP368.60
(exc. VAT)
PHP412.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 615 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP73.72 | PHP368.60 |
| 10 - 20 | PHP65.804 | PHP329.02 |
| 25 - 95 | PHP64.498 | PHP322.49 |
| 100 - 495 | PHP56.074 | PHP280.37 |
| 500 + | PHP46.414 | PHP232.07 |
*price indicative
- RS Stock No.:
- 257-9326
- Mfr. Part No.:
- IRF8010PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 100V single n channel power mosfet in a TO 220 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard through hole power package
High current rating
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-220
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- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
