Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V TO-220

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Subtotal (1 tube of 50 units)*

PHP3,900.40

(exc. VAT)

PHP4,368.45

(inc. VAT)

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In Stock
  • 600 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
50 - 50PHP78.008PHP3,900.40
100 - 450PHP75.668PHP3,783.40
500 - 950PHP71.128PHP3,556.40
1000 - 4950PHP64.726PHP3,236.30
5000 +PHP56.959PHP2,847.95

*price indicative

RS Stock No.:
257-9325
Mfr. Part No.:
IRF8010PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

81nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon IRF series is the 100V single n channel power mosfet in a TO 220 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard through hole power package

High current rating

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