Vishay IRFR9010 Type P-Channel Power MOSFET, -5.3 A, -50 V, 3-Pin TO-252 IRFR9010TRPBF
- RS Stock No.:
- 256-7311
- Mfr. Part No.:
- IRFR9010TRPBF
- Manufacturer:
- Vishay
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PHP511.44
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PHP572.81
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP51.144 | PHP511.44 |
| 50 - 90 | PHP49.61 | PHP496.10 |
| 100 - 240 | PHP46.634 | PHP466.34 |
| 250 - 990 | PHP42.438 | PHP424.38 |
| 1000 + | PHP37.346 | PHP373.46 |
*price indicative
- RS Stock No.:
- 256-7311
- Mfr. Part No.:
- IRFR9010TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -5.3A | |
| Maximum Drain Source Voltage Vds | -50V | |
| Package Type | TO-252 | |
| Series | IRFR9010 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.5Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -5.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -5.3A | ||
Maximum Drain Source Voltage Vds -50V | ||
Package Type TO-252 | ||
Series IRFR9010 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.5Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -5.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.39mm | ||
Automotive Standard No | ||
Vishay IRFR9010 Series Power MOSFET, 50V Maximum Drain Source Voltage, 5.3A Maximum Continuous Drain Current - IRFR9010TRPBF
This power MOSFET is a P‑channel semiconductor device designed for switching and power-management roles in surface-mount assemblies. It operates across a wide thermal range and is suited to circuits requiring controlled high-current switching and moderate voltage handling in compact TO‑252 packaging.
Features and Benefits:
• 50V drain-to-source rating enables moderate-voltage switching
• 0.5Ω Rds(on) reduces conduction losses in load paths
• 5.3A continuous drain current supports sustained current delivery
• 9.1nC typical gate charge allows faster gate-drive response
• 25W maximum power dissipation permits higher thermal loading
• -55°C to +150°C operating range supports harsh environments
• 0.5Ω Rds(on) reduces conduction losses in load paths
• 5.3A continuous drain current supports sustained current delivery
• 9.1nC typical gate charge allows faster gate-drive response
• 25W maximum power dissipation permits higher thermal loading
• -55°C to +150°C operating range supports harsh environments
Applications
• Suitable for high-side switching in power rails
• Ideal for battery management and load disconnects
• Used with compact converters requiring surface mount
• Can be used for reverse-polarity protection circuits
• Suitable for thermal-stress testing in electronics validation
• Ideal for battery management and load disconnects
• Used with compact converters requiring surface mount
• Can be used for reverse-polarity protection circuits
• Suitable for thermal-stress testing in electronics validation
What package type does it use and how does that affect mounting?
It comes in a TO‑252 package designed for surface mounting, providing a low-profile option compatible with reflow processes and enabling thermal coupling to PCB copper for heat dissipation.
What gate-drive limitations should be considered during design?
The device tolerates up to 20V between gate and source, so gate drivers must remain within that range to avoid damaging the gate oxide.
How should thermal management be approached on a PCB?
Given a 25W maximum dissipation, designers should allocate adequate copper area or thermal vias beneath the package to spread heat and maintain junction temperature within safe limits.
Are there special considerations for switching performance?
The typical gate charge of 9.1nC implies moderate gate-drive energy
driver selection should balance switching speed against EMI and drive power.
Related links
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