onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-247
- RS Stock No.:
- 254-7671
- Mfr. Part No.:
- NTH4L075N065SC1
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 450 units)*
PHP199,315.35
(exc. VAT)
PHP223,233.30
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 01, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 450 - 450 | PHP442.923 | PHP199,315.35 |
| 900 - 900 | PHP434.064 | PHP195,328.80 |
| 1350 + | PHP425.383 | PHP191,422.35 |
*price indicative
- RS Stock No.:
- 254-7671
- Mfr. Part No.:
- NTH4L075N065SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free 2LI, RoHS with exemption 7a | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free 2LI, RoHS with exemption 7a | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor NTH series of a silicon carbide mosfet uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition with the low on resistance and compact chip size. It ensures a low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Used in telecommunication
High reliability at high temperature ambient
High speed switching and low capacitance
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