Vishay Type N-Channel MOSFET, 118 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L)

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP148,935.00

(exc. VAT)

PHP166,806.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 - 6000PHP49.645PHP148,935.00
9000 +PHP46.17PHP138,510.00

*price indicative

RS Stock No.:
252-0306
Mfr. Part No.:
SQJ184EP-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

118A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.04mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

214W

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

4.9 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

Related links