Infineon IPD Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S406ATMA1

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PHP186.36

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PHP208.72

(inc. VAT)

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2 - 8PHP93.18PHP186.36
10 - 98PHP83.865PHP167.73
100 - 248PHP75.44PHP150.88
250 - 498PHP67.905PHP135.81
500 +PHP61.10PHP122.20

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Packaging Options:
RS Stock No.:
249-6916
Mfr. Part No.:
IPD90N10S406ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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