Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252

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Subtotal (1 pack of 5 units)*

PHP449.54

(exc. VAT)

PHP503.485

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP89.908PHP449.54
50 - 95PHP69.134PHP345.67
100 - 245PHP64.09PHP320.45
250 - 995PHP62.902PHP314.51
1000 +PHP61.716PHP308.58

*price indicative

RS Stock No.:
273-3002
Mfr. Part No.:
IPD048N06L3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

60V

Series

IPD

Package Type

TO-252

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

6.223mm

Length

10.48mm

Width

6.731 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications

Highest system efficiency

Less paralleling required

Increased power density

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