Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6

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Subtotal (1 reel of 5000 units)*

PHP235,435.00

(exc. VAT)

PHP263,685.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 - 5000PHP47.087PHP235,435.00
10000 - 10000PHP45.674PHP228,370.00
15000 +PHP43.847PHP219,235.00

*price indicative

RS Stock No.:
249-6890
Mfr. Part No.:
IAUC60N04S6N031HATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM6

Package Type

SuperSO8 5 x 6

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

75W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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