Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1

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PHP94.51

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PHP105.852

(inc. VAT)

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2 - 8PHP47.255PHP94.51
10 - 98PHP45.835PHP91.67
100 - 248PHP44.46PHP88.92
250 - 498PHP43.125PHP86.25
500 +PHP41.83PHP83.66

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Packaging Options:
RS Stock No.:
249-6889
Mfr. Part No.:
IAUC60N04S6L030HATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO8 5 x 6

Series

OptiMOS-TM6

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

27nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

75W

Maximum Operating Temperature

175°C

Transistor Configuration

Half Bridge

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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