Infineon BSZ Type N-Channel MOSFET & Diode, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ0503NSIATMA1
- RS Stock No.:
- 244-1566
- Mfr. Part No.:
- BSZ0503NSIATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP368.48
(exc. VAT)
PHP412.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,625 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP73.696 | PHP368.48 |
| 10 - 95 | PHP70.724 | PHP353.62 |
| 100 - 245 | PHP67.752 | PHP338.76 |
| 250 - 495 | PHP64.782 | PHP323.91 |
| 500 + | PHP61.81 | PHP309.05 |
*price indicative
- RS Stock No.:
- 244-1566
- Mfr. Part No.:
- BSZ0503NSIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.
N Channel
Superior thermal resistance
Pb-free lead plating;RoHS compliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon BSZ Type N-Channel MOSFET & Diode 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ017NE2LS5IATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ0901NSATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ063N04LS6ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ065N06LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ031NE2LS5ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1