Infineon BSZ N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- RS Stock No.:
- 241-9682
- Mfr. Part No.:
- BSZ075N08NS5ATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP51.20 | PHP256,000.00 |
| 10000 - 10000 | PHP48.954 | PHP244,770.00 |
| 15000 + | PHP46.709 | PHP233,545.00 |
*price indicative
- RS Stock No.:
- 241-9682
- Mfr. Part No.:
- BSZ075N08NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain Source Voltage, 212A Maximum Continuous Drain Current - BSZ075N08NS5ATMA1
This MOSFET is a high-current N-channel semiconductor device intended for switching and power-regulation roles in industrial and commercial electronic systems. It is designed to operate across a wide temperature span and supports surface-mount assembly in Compact packages, delivering low conduction losses and efficient switching for demanding power applications.
Features and Benefits:
• Very low on-resistance reduces conduction losses for heavy loads
• High continuous drain current supports substantial current flow
• 40V drain-source rating enables moderate-voltage power stages
• 81W dissipation allows significant thermal loading capacity
• 80nC typical gate charge supports gate-drive design decisions
• 20V gate tolerance aids flexibility in drive-voltage selection
• High continuous drain current supports substantial current flow
• 40V drain-source rating enables moderate-voltage power stages
• 81W dissipation allows significant thermal loading capacity
• 80nC typical gate charge supports gate-drive design decisions
• 20V gate tolerance aids flexibility in drive-voltage selection
Applications
• Suitable for high-current DC-DC converter stages
• Ideal for motor-drive half-bridge legs in power electronics
• Used for synchronous rectification in power supplies
• Can be used for battery management and distribution systems
• Appropriate for switching elements in server power rails
• Ideal for motor-drive half-bridge legs in power electronics
• Used for synchronous rectification in power supplies
• Can be used for battery management and distribution systems
• Appropriate for switching elements in server power rails
What thermal extremes can it withstand during operation?
It is specified to operate down to −55°C and up to +150°C enabling use in wide-temperature environments.
How does the package influence PCB layout choices?
The surface-mount SuperSO8 5x6 package requires thermal and footprint planning to manage heat and current paths on the board.
What electrical characteristic dictates conduction efficiency?
The maximum drain-source resistance of 0.7mΩ directly affects conduction losses at high currents.
How does gate charge impact switching performance?
The typical gate charge of 80nC determines gate-drive energy and switching transition-speed considerations.
Are there environmental or regulatory constraints to consider?
The component meets RoHS requirements limiting certain hazardous substances in assembly.
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