Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin SuperSO8 5 x 6 BSZ075N08NS5ATMA1
- RS Stock No.:
- 241-9683
- Mfr. Part No.:
- BSZ075N08NS5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP274.55
(exc. VAT)
PHP307.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 14,955 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP54.91 | PHP274.55 |
| 10 - 95 | PHP52.934 | PHP264.67 |
| 100 - 245 | PHP50.958 | PHP254.79 |
| 250 - 495 | PHP48.982 | PHP244.91 |
| 500 + | PHP47.006 | PHP235.03 |
*price indicative
- RS Stock No.:
- 241-9683
- Mfr. Part No.:
- BSZ075N08NS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 5 N-channel MOSFET has 80 V drain source voltage (VDS) & 73 A drain current (ID). It offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. regulator, etc. It is especially designed for synchronous rectification in telecom and server power supplies. In addition, it can also be utilized in other industrial applications such as solar, low voltage drives and adapters.
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DCconverters
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
100% avalanche tested
N-channel, normal level
Qualified according to JEDEC1) for target applications
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Higher solder joint reliability with enlarged source interconnection
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