Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode, 40 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1

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PHP293.50

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PHP328.70

(inc. VAT)

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Per Pack*
5 - 5PHP58.70PHP293.50
10 - 95PHP56.212PHP281.06
100 - 245PHP53.724PHP268.62
250 - 495PHP51.238PHP256.19
500 +PHP48.75PHP243.75

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Packaging Options:
RS Stock No.:
244-1559
Mfr. Part No.:
BSC0924NDIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOSTM

Package Type

SuperSO8 5 x 6

Pin Count

8

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual N Channel

Standards/Approvals

JEDEC1, IEC61249-2-22

Number of Elements per Chip

2

Automotive Standard

No

The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.

N Channel

100% Avalanche tested

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

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