Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3
- RS Stock No.:
- 239-8632
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 unit)*
PHP421.26
(exc. VAT)
PHP471.81
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 1,494 unit(s) shipping from August 10, 2026
Units | Per Unit |
|---|---|
| 1 - 49 | PHP421.26 |
| 50 - 99 | PHP408.63 |
| 100 - 249 | PHP384.12 |
| 250 - 999 | PHP349.54 |
| 1000 + | PHP307.61 |
*price indicative
- RS Stock No.:
- 239-8632
- Mfr. Part No.:
- SiHH105N60EF-T1GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.091Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 174W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.091Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 174W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - SiHH105N60EF-T1GE3
Features and Benefits:
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes
Applications
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting
What mounting format does it use for compact assemblies?
How does it perform across temperature extremes?
What gate-drive constraints should be observed?
Is it suitable for automotive qualification requirements?
Related links
- Vishay EF Type N-Channel MOSFET 650 V Depletion, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
