Vishay SIB Type P-Channel MOSFET, 4.5 A, 30 V P, 6-Pin PowerPAK SC-75 SIB4317EDK-T1-GE3
- RS Stock No.:
- 239-5375
- Mfr. Part No.:
- SIB4317EDK-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP472.85
(exc. VAT)
PHP529.60
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP18.914 | PHP472.85 |
| 50 - 75 | PHP17.023 | PHP425.58 |
| 100 - 225 | PHP15.32 | PHP383.00 |
| 250 - 975 | PHP13.789 | PHP344.73 |
| 1000 + | PHP12.41 | PHP310.25 |
*price indicative
- RS Stock No.:
- 239-5375
- Mfr. Part No.:
- SIB4317EDK-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIB | |
| Package Type | PowerPAK SC-75 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 6.6nC | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6 mm | |
| Standards/Approvals | RoHS | |
| Length | 1.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIB | ||
Package Type PowerPAK SC-75 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 6.6nC | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.6 mm | ||
Standards/Approvals RoHS | ||
Length 1.6mm | ||
Automotive Standard No | ||
The Vishay P channel MOSFET has drain current of -4.5 A. It is used for Portable devices such as smart phones, tablet PCs and mobile computing
Typical ESD protection (MOSFET): 1500 V (HBM)
100 % Rg tested
Related links
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