Vishay SIA433EDJ-T1-GE3 IGBT

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Subtotal (1 pack of 20 units)*

PHP631.80

(exc. VAT)

PHP707.60

(inc. VAT)

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Last RS stock
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Units
Per Unit
Per Pack*
20 - 20PHP31.59PHP631.80
40 - 80PHP30.80PHP616.00
100 - 480PHP30.03PHP600.60
500 - 980PHP29.279PHP585.58
1000 +PHP28.547PHP570.94

*price indicative

Packaging Options:
RS Stock No.:
180-7754
Mfr. Part No.:
SIA433EDJ-T1-GE3
Manufacturer:
Vishay

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-SC70 MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has a drain-source resistance of 18mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 12A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Built-in ESD protection with zener diode
• Halogen free
• Lead (Pb) free component
• Low on-resistance
• New thermally enhanced PowerPAK SC-70 package
• Operating temperature ranges between -55°C and 150°C
• Small footprint area
• TrenchFET power MOSFET
• Typical ESD performance is 1800V

Applications


• Adaptor switches
• Battery switches
• Load switches
• Notebook computers

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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