onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S
- RS Stock No.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
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PHP878.18
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PHP983.56
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 - 9 | PHP878.18 |
| 10 - 49 | PHP860.45 |
| 50 - 99 | PHP843.21 |
| 100 - 199 | PHP826.49 |
| 200 + | PHP809.77 |
*price indicative
- RS Stock No.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Power Dissipation Pd | 325W | |
| Maximum Gate Source Voltage Vgs | -0.45 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 41.36mm | |
| Width | 5.2 mm | |
| Standards/Approvals | RoHS | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Power Dissipation Pd 325W | ||
Maximum Gate Source Voltage Vgs -0.45 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 41.36mm | ||
Width 5.2 mm | ||
Standards/Approvals RoHS | ||
Length 15.8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
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