onsemi Type N-Channel MOSFET, 162 A, 30 V N, 8-Pin WDFN NVTFS4C02NWFTAG
- RS Stock No.:
- 229-6508
- Mfr. Part No.:
- NVTFS4C02NWFTAG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP963.14
(exc. VAT)
PHP1,078.715
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Last RS stock
- Final 1,495 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP192.628 | PHP963.14 |
| 10 - 95 | PHP186.85 | PHP934.25 |
| 100 - 245 | PHP181.066 | PHP905.33 |
| 250 - 495 | PHP177.212 | PHP886.06 |
| 500 + | PHP173.364 | PHP866.82 |
*price indicative
- RS Stock No.:
- 229-6508
- Mfr. Part No.:
- NVTFS4C02NWFTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.25mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.8mm | |
| Length | 3.15mm | |
| Height | 3.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.25mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 0.8mm | ||
Length 3.15mm | ||
Height 3.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable flank capable for enhanced optical inspection. It is used in reverser battery protection, switching power supplies and power switches.
Compact design
Minimize conduction losses
Minimize driver losses
Enhanced optical inspection
Related links
- onsemi Type N-Channel MOSFET 30 V N, 8-Pin WDFN
- onsemi NTT Type N-Channel MOSFET 1200 V N, 8-Pin WDFN
- onsemi NTT Type N-Channel MOSFET 1200 V N, 8-Pin WDFN NTTFS012N10MDTAG
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
- Vishay SiSS52DN Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212
- onsemi NTTFS6H850N Type N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- Vishay SISS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3
- Vishay SISS52DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3