onsemi NBTLS Type N-Channel MOSFET, 203 A, 80 V N, 8-Pin M0-299A
- RS Stock No.:
- 229-6447
- Mfr. Part No.:
- NTBLS1D7N08H
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
PHP567,382.00
(exc. VAT)
PHP635,468.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from July 06, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 4000 | PHP283.691 | PHP567,382.00 |
| 6000 - 8000 | PHP275.181 | PHP550,362.00 |
| 10000 + | PHP266.925 | PHP533,850.00 |
*price indicative
- RS Stock No.:
- 229-6447
- Mfr. Part No.:
- NTBLS1D7N08H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NBTLS | |
| Package Type | M0-299A | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.9mm | |
| Width | 2.4 mm | |
| Length | 11.78mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NBTLS | ||
Package Type M0-299A | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Height 9.9mm | ||
Width 2.4 mm | ||
Length 11.78mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET has low on state resistance and low gate charge. It has 203 A of drain current. It is used in power tools, battery operated vacuums, UAV/drones, material handling, BMS/storage and home automation.
Minimize conduction losses
Minimize driver losses
Lowers switching noise/EMI
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