onsemi NVMFS6H800N Type N-Channel MOSFET, 203 A, 80 V Enhancement, 5-Pin DFN NVMFS6H800NT1G
- RS Stock No.:
- 178-4435
- Mfr. Part No.:
- NVMFS6H800NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP1,569.96
(exc. VAT)
PHP1,758.355
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 95 | PHP313.992 | PHP1,569.96 |
| 100 - 245 | PHP304.57 | PHP1,522.85 |
| 250 - 495 | PHP295.436 | PHP1,477.18 |
| 500 - 995 | PHP286.574 | PHP1,432.87 |
| 1000 + | PHP277.978 | PHP1,389.89 |
*price indicative
- RS Stock No.:
- 178-4435
- Mfr. Part No.:
- NVMFS6H800NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 203A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFS6H800N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 85nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 203A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFS6H800N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 85nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Small Footprint (5x6 mm)
Low RDS(on)
Low QG and Capacitance
NVMFS6H800NWF - Wettable Flank Option
PPAP capable
Benefits
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical
Inspection
Applications
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
48V systems
End Products
Motor Control
Load Switch
DC/DC converter
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