Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO
- RS Stock No.:
- 229-1829
- Mfr. Part No.:
- IPC50N04S55R8ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP100,225.00
(exc. VAT)
PHP112,250.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 35,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP20.045 | PHP100,225.00 |
| 10000 - 10000 | PHP19.444 | PHP97,220.00 |
| 15000 + | PHP18.86 | PHP94,300.00 |
*price indicative
- RS Stock No.:
- 229-1829
- Mfr. Part No.:
- IPC50N04S55R8ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 5.58 mm | |
| Length | 5.25mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 5.58 mm | ||
Length 5.25mm | ||
Automotive Standard AEC-Q101 | ||
40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6
Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.
All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.
Summary of Features
•OptiMOS™ - power MOSFET for automotive applications
•N-channel - Enhancement mode - Normal Level
•AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green Product (RoHS compliant)
•100% Avalanche tested
Related links
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