Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

RS Stock No.:: 229-1830
Mfr. Part No.:: IPC50N04S55R8ATMA1
Manufacturer:: Infineon

Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

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Subtotal (1 pack of 15 units)*

PHP364.80

(exc. VAT)

PHP408.60

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

39,960 unit(s) ready to ship from another location

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Units	Per Unit	Per Pack*
15 - 15	PHP24.32	PHP364.80
30 - 75	PHP22.281	PHP334.22
90 - 225	PHP20.59	PHP308.85
240 - 465	PHP19.097	PHP286.46
480 +	PHP18.60	PHP279.00

*price indicative

RS Stock No.:: 229-1830
Mfr. Part No.:: IPC50N04S55R8ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Series	IPC
	Package Type	SuperSO
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	42W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Operating Temperature	175°C
	Length	5.25mm
	Standards/Approvals	No
	Height	1.1mm
	Width	5.58 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Series IPC
	Package Type SuperSO
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 42W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Operating Temperature 175°C
	Length 5.25mm
	Standards/Approvals No
	Height 1.1mm
	Width 5.58 mm
	Automotive Standard AEC-Q101

Datasheet - IPC50N04S55R8ATMA1

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6

Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications.

All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.

Additionally, the new generation of the SS08 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.

Summary of Features

•OptiMOS™ - power MOSFET for automotive applications

•N-channel - Enhancement mode - Normal Level

•AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green Product (RoHS compliant)

•100% Avalanche tested

Infineon IPC Type N-Channel MOSFET, 50 A, 40 V Enhancement, 8-Pin SuperSO IPC50N04S55R8ATMA1

FREE delivery for orders over ₱3,000.00

40V, N-Ch, 0.9 mΩ max, Automotive MOSFET, PQNF, OptiMOS™-6

Summary of Features

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