Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3

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Subtotal (1 pack of 5 units)*

PHP540.54

(exc. VAT)

PHP605.405

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP108.108PHP540.54
50 - 95PHP100.132PHP500.66
100 - 245PHP83.968PHP419.84
250 - 995PHP81.66PHP408.30
1000 +PHP69.274PHP346.37

*price indicative

Packaging Options:
RS Stock No.:
228-2916
Mfr. Part No.:
SIRA20BDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

335A

Maximum Drain Source Voltage Vds

25V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

124nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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