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    Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 Vishay SIRA20BDP-T1-GE3

    View all MOSFETs
    Bulk discount available

    Subtotal (1 pack of 5 units)**

    PHP540.54

    (exc. VAT)

    PHP605.41

    (inc. VAT)

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    5980 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Pack**
    5 - 45PHP108.108PHP540.54
    50 - 95PHP100.132PHP500.66
    100 - 245PHP83.968PHP419.84
    250 - 995PHP81.66PHP408.30
    1000 +PHP69.274PHP346.37

    **price indicative

    Packaging Options:
    RS Stock No.:
    228-2916
    Mfr. Part No.:
    SIRA20BDP-T1-GE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    335 A

    Maximum Drain Source Voltage

    25 V

    Series

    TrenchFET

    Package Type

    PowerPAK SO-8

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    0.00058 Ω

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2.1V

    Transistor Material

    Si

    Number of Elements per Chip

    2

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