Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

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Subtotal (1 pack of 5 units)*

PHP465.50

(exc. VAT)

PHP521.35

(inc. VAT)

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  • Final 5,880 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
5 - 45PHP93.10PHP465.50
50 - 95PHP86.23PHP431.15
100 - 245PHP72.31PHP361.55
250 - 995PHP70.32PHP351.60
1000 +PHP59.652PHP298.26

*price indicative

Packaging Options:
RS Stock No.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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