Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3

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Subtotal (1 pack of 25 units)*

PHP499.50

(exc. VAT)

PHP559.50

(inc. VAT)

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  • 2,525 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
25 - 25PHP19.98PHP499.50
50 - 75PHP17.982PHP449.55
100 - 225PHP16.184PHP404.60
250 - 975PHP14.566PHP364.15
1000 +PHP13.109PHP327.73

*price indicative

Packaging Options:
RS Stock No.:
228-2814
Mfr. Part No.:
Si2387DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

80V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

100 % Rg and UIS tested

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