Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1

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PHP1,083.49

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PHP1,213.51

(inc. VAT)

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Units
Per Unit
1 - 9PHP1,083.49
10 - 99PHP993.15
100 - 249PHP917.14
250 - 499PHP851.72
500 +PHP828.05

*price indicative

Packaging Options:
RS Stock No.:
225-0580
Mfr. Part No.:
IPDQ60R010S7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Series

IPDQ60R010S7

Package Type

HDSOP

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

318nC

Maximum Power Dissipation Pd

694W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.82V

Maximum Operating Temperature

150°C

Length

15.1mm

Width

2.35 mm

Height

21.06mm

Standards/Approvals

No

Automotive Standard

No

The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.

Minimizes conduction losses

Increases energy efficiency

More compact and easier designs

Eliminates or reduces heat sinks in solid-state design

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