Infineon 600V CoolMOS Type N-Channel MOSFET, 50 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPQC60R010S7XTMA1
- RS Stock No.:
- 284-890
- Mfr. Part No.:
- IPQC60R010S7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 750 units)*
PHP1,142,685.75
(exc. VAT)
PHP1,279,808.25
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 30, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 750 + | PHP1,523.581 | PHP1,142,685.75 |
*price indicative
- RS Stock No.:
- 284-890
- Mfr. Part No.:
- IPQC60R010S7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-HDSOP-22 | |
| Series | 600V CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 694W | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-HDSOP-22 | ||
Series 600V CoolMOS | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 694W | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET with cutting edge 600V CoolMOS SJ S7 Power Device represents a remarkable Leap in MOSFET technology, specifically tailored for low frequency switching applications. Engineered with the utmost precision, this device offers unparalleled energy efficiency, making it an Ideal choice for solid state relays, circuit breakers, and various power management systems. The Advanced design, showcasing a Compact footprint and superior heat dissipation capabilities, ensures optimal performance under demanding conditions. Recognised for its distinct advantages over traditional electromechanical components, this device integrates seamless switching with exceptional reliability. It is fully qualified according to JEDEC standards for industrial applications, providing reassurance of its robustness and dependability in a wide range of environments.
Optimised for price and performance
High Pulse current capability for robustness
Kelvin source pin enhances switching performance
Supports applications facing shock and vibration
Internal body diode minimises conduction losses
Accommodates TOP side cooling for better thermal performance
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