Infineon IPS70R Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 222-4930
- Mfr. Part No.:
- IPS70R1K4P7SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
PHP1,155.525
(exc. VAT)
PHP1,294.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 150 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 75 - 150 | PHP15.407 | PHP1,155.53 |
| 225 - 300 | PHP14.945 | PHP1,120.88 |
| 375 + | PHP14.497 | PHP1,087.28 |
*price indicative
- RS Stock No.:
- 222-4930
- Mfr. Part No.:
- IPS70R1K4P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | IPS70R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 22.7W | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series IPS70R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 22.7W | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon developed to serve todays and especially tomorrows trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPS70R1K4P7SAKMA1
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1
- Infineon IPS70R Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R1K4P7SAKMA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
