Infineon IPS70R Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-251 IPS70R1K4P7SAKMA1
- RS Stock No.:
- 222-4931
- Mfr. Part No.:
- IPS70R1K4P7SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP825.00
(exc. VAT)
PHP924.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Limited stock
- Plus 50 left, shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP33.00 | PHP825.00 |
| 50 - 75 | PHP30.238 | PHP755.95 |
| 100 - 225 | PHP27.95 | PHP698.75 |
| 250 - 475 | PHP25.929 | PHP648.23 |
| 500 + | PHP25.189 | PHP629.73 |
*price indicative
- RS Stock No.:
- 222-4931
- Mfr. Part No.:
- IPS70R1K4P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | IPS70R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Power Dissipation Pd | 22.7W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.4mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series IPS70R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Power Dissipation Pd 22.7W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.4mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
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