Infineon CoolGaN Type N-Channel MOSFET, 12.5 A, 600 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

PHP1,393,674.00

(exc. VAT)

PHP1,560,914.00

(inc. VAT)

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  • Shipping from November 22, 2027
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Units
Per Unit
Per Reel*
2000 - 2000PHP696.837PHP1,393,674.00
4000 - 4000PHP675.931PHP1,351,862.00
6000 +PHP655.654PHP1,311,308.00

*price indicative

RS Stock No.:
222-4637
Mfr. Part No.:
IGT60R190D1SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12.5A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

CoolGaN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound

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