Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF IPT60R028G7XTMA1

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PHP985.62

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PHP1,103.89

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1 - 9PHP985.62
10 - 99PHP903.50
100 - 249PHP833.69
250 - 499PHP774.15
500 +PHP752.59

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Packaging Options:
RS Stock No.:
222-4938
Mfr. Part No.:
IPT60R028G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

600V

Series

IPT60R

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

123nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

391W

Maximum Operating Temperature

150°C

Length

10.1mm

Height

2.4mm

Standards/Approvals

No

Width

10.58 mm

Automotive Standard

No

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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