Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF

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Subtotal (1 reel of 2000 units)*

PHP1,117,010.00

(exc. VAT)

PHP1,251,052.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2000 - 2000PHP558.505PHP1,117,010.00
4000 - 4000PHP541.75PHP1,083,500.00
6000 +PHP525.497PHP1,050,994.00

*price indicative

RS Stock No.:
222-4937
Mfr. Part No.:
IPT60R028G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

IPT60R

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

123nC

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

391W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.1mm

Height

2.4mm

Width

10.58 mm

Automotive Standard

No

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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