Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

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15 - 15PHP54.88PHP823.20
30 - 75PHP50.325PHP754.88
90 - 225PHP46.42PHP696.30
240 - 465PHP43.057PHP645.86
480 +PHP41.865PHP627.98

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Packaging Options:
RS Stock No.:
222-4629
Mfr. Part No.:
BSZ068N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

46W

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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