Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1

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Subtotal (1 pack of 20 units)*

PHP987.84

(exc. VAT)

PHP1,106.38

(inc. VAT)

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Units
Per Unit
Per Pack*
20 - 20PHP49.392PHP987.84
40 - 80PHP48.158PHP963.16
100 - 220PHP46.955PHP939.10
240 - 480PHP45.78PHP915.60
500 +PHP44.635PHP892.70

*price indicative

Packaging Options:
RS Stock No.:
218-3041
Mfr. Part No.:
IPD135N08N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-TM3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.5mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

N-channel, normal level

100% avalanche tested

Pb-free plating

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