Infineon HEXFET Type N-Channel MOSFET & Diode, 73 A, 100 V Enhancement, 2-Pin TO-263 IRFS4610TRLPBF
- RS Stock No.:
- 220-7498
- Mfr. Part No.:
- IRFS4610TRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP1,074.28
(exc. VAT)
PHP1,203.195
(inc. VAT)
FREE delivery for orders over ₱5,000.00
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- Shipping from November 30, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP214.856 | PHP1,074.28 |
| 10 - 95 | PHP197.184 | PHP985.92 |
| 100 - 245 | PHP181.766 | PHP908.83 |
| 250 - 495 | PHP169.078 | PHP845.39 |
| 500 + | PHP164.092 | PHP820.46 |
*price indicative
- RS Stock No.:
- 220-7498
- Mfr. Part No.:
- IRFS4610TRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Height | 9.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Height 9.65mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
High-current rating
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High current carrying capability
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