Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1
- RS Stock No.:
- 220-7389
- Mfr. Part No.:
- IPB60R060P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP589.25
(exc. VAT)
PHP659.96
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 78 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP294.625 | PHP589.25 |
| 10 - 98 | PHP270.115 | PHP540.23 |
| 100 - 248 | PHP249.18 | PHP498.36 |
| 250 - 498 | PHP231.30 | PHP462.60 |
| 500 + | PHP224.665 | PHP449.33 |
*price indicative
- RS Stock No.:
- 220-7389
- Mfr. Part No.:
- IPB60R060P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 4-Pin TO-247 IPZA60R060P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R065P7AUMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement TO-263 IPB65R190CFDAATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin SOT-223