Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 57.2 A, 650 V Enhancement TO-263 IPB65R190CFDAATMA1
- RS Stock No.:
- 220-7393
- Mfr. Part No.:
- IPB65R190CFDAATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP407.88
(exc. VAT)
PHP456.82
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 826 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP203.94 | PHP407.88 |
| 10 - 98 | PHP186.87 | PHP373.74 |
| 100 - 248 | PHP172.715 | PHP345.43 |
| 250 - 498 | PHP160.03 | PHP320.06 |
| 500 + | PHP155.645 | PHP311.29 |
*price indicative
- RS Stock No.:
- 220-7393
- Mfr. Part No.:
- IPB65R190CFDAATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263 IPB60R060P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1