Infineon C7 GOLD Type N-Channel MOSFET, 23 A, 650 V Enhancement, 8-Pin HSOF

RS Stock No.:: 219-6012
Mfr. Part No.:: IPT60R150G7XTMA1
Manufacturer:: Infineon

Infineon C7 GOLD Type N-Channel MOSFET, 23 A, 650 V Enhancement, 8-Pin HSOF

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2000 units)*

PHP219,640.00

(exc. VAT)

PHP246,000.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from October 05, 2026

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Units	Per Unit	Per Reel*
2000 - 2000	PHP109.82	PHP219,640.00
4000 - 4000	PHP105.596	PHP211,192.00
6000 +	PHP104.259	PHP208,518.00

*price indicative

RS Stock No.:: 219-6012
Mfr. Part No.:: IPT60R150G7XTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	650V
	Package Type	HSOF
	Series	C7 GOLD
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	106W
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Length	10.1mm
	Standards/Approvals	No
	Width	10.58 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 650V
	Package Type HSOF
	Series C7 GOLD
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 106W
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Length 10.1mm
	Standards/Approvals No
	Width 10.58 mm
	Automotive Standard No

Datasheet - IPT60R150G7XTMA1

The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH)

Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads

Enables improved thermal performance R th

Higher efficiency due to the improved C7 Gold technology and faster switching

Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements

Infineon C7 GOLD Type N-Channel MOSFET, 23 A, 650 V Enhancement, 8-Pin HSOF

FREE delivery for orders over ₱3,000.00

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